Product overview
- Part Number
- RBN40H65T1FPQ-A0#CB0
- Manufacturer
- Renesas Electronics
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors POWER TRANSISTOR 650V 40A IGBT G8H
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.5 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 80 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247A-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 185 W
- Technology :
- SI
Description
IGBT Transistors POWER TRANSISTOR 650V 40A IGBT G8H
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Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Fixed-Point DSPs TMS320 Platform
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