Product overview
- Part Number
- QPD1008
- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
Product Attributes
- Gain :
- 17.5 dB
- Id - Continuous Drain Current :
- 4 A
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 3.2 GHz
- Output Power :
- 162 W
- Package / Case :
- NI-360
- Packaging :
- Tray
- Pd - Power Dissipation :
- 127 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 50 V
- Vgs - Gate-Source Breakdown Voltage :
- 145 V
Description
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
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Associated Product
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Fixed-Point Digital Signal Processor 288-NFBGA -40 to 105
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Dig Signal Cntrlr
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Fixed-Point DSPs TMS320 Platform
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Fixed-Point Digital Signal Processor
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Video/Imaging Fixed-Point DSP
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