Product overview
- Part Number
- IPDD60R190G7XTMA1
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET HIGH POWER_NEW
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 13 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- HDSOP-10
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 76 W
- Qg - Gate Charge :
- 18 nC
- Rds On - Drain-Source Resistance :
- 190 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Description
MOSFET HIGH POWER_NEW
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Associated Product
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Fixed-Point Digital Signal Processor 288-NFBGA -40 to 105
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Dig Signal Cntrlr
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Fixed-Point DSPs TMS320 Platform
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Fixed-Point Digital Signal Processor
-
Texas InstrumentsDigital Signal Processors & Controllers - DSP, DSC Video/Imaging Fixed-Point DSP
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